PBRP123ET,215 datasheet

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Маркировка

PBRP123ET,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBRP123ET,215 Collector- Emitter Voltage Vceo Max: - 40 V Configuration: Single Current - Collector (ic) (max): 600mA Current - Collector Cutoff (max): 500nA Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 300mA, 5V Emitter- Base Voltage Vebo: - 10 V Frequency - Transition: - ID_COMPONENTS: 1948007 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Peak Dc Collector Current: 600 mA Power - Max: 250mW Power Dissipation: 250 mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 2.2K Series: - Transistor Polarity: PNP Transistor Type: PNP - Pre-Biased Typical Input Resistor: 2.2 KOhm Typical Resistor Ratio: 1 Vce Saturation (max) @ Ib, Ic: 750mV @ 6mA, 600mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Switching - Resistor Biased RoHS: yes DC Collector/Base Gain hfe Min: 120 Collector- Emitter Voltage VCEO Max: - 40 V Peak DC Collector Current: 600 mA Emitter- Base Voltage VEBO: - 10 V Factory Pack Quantity: 3000 Part # Aliases: PBRP123ET T/R Other Names: 934058985215, PBRP123ET T/R
Количество страниц

12 шт.
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109,91 KB